RRAM array having lateral RRAM cells and vertical conducting structures
US9257486B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 11, 2014 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Jul 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/20
Abstract
An RRAM array is provided. The RRAM array includes a plurality of horizontal electrode lines elongated in a horizontal direction. The RRAM array also includes a plurality of conducting structures elongated in a vertical direction. Each of the conducting structures includes a plurality of electrode blocks and a plurality of contact vias which are alternately arranged. The electrode blocks and the electrode lines are on the same horizontal planes. The RRAM array further includes a plurality of resistance variable elements sandwiched between the electrode lines and the electrode blocks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.