Semiconductor device
US9257501B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2013 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Dec 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor substrate of a semiconductor device includes a first conductive body region that is formed in the element region; a second conductive drift region that is formed in the element region; a gate electrode that is formed in the element region, that is arranged in a gate trench, and that faces the body region; an insulating body that is formed in the element region and is arranged between the gate electrode and an inside wall of the gate trench; a first conductive floating region that is formed in the element region and that is surrounded by the drift region; a first voltage-resistance retaining structure that is formed in the peripheral region and that surrounds the element region; and a gate pad that is formed in the peripheral region, and is electrically connected to the gate electrode in a position on the element region-side of the first voltage-resistance retaining structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.