Patent · US Active

III-N device structures having a non-insulating substrate

US9257547B2 · kind B2 · utility

12Cited by

104References

30Claims

0Family size

Assignee

Transphorm Inc. · US

Inventors

Nicholas Fichtenbaum · Newbury Park, US
Lee McCarthy · Lompoc, US
Yifeng Wu · Goleta, US

Key dates

Filing date	Sep 13, 2011
Grant date	Feb 9, 2016
Priority date	—
Expiry date	Oct 18, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503

Abstract

Embodiments of the present disclosure includes a III-N device having a substrate layer, a first III-N material layer on one side of the substrate layer, a second III-N material layer on the first III-N material layer, and a barrier layer disposed on another side of the substrate layer, the barrier layer being less electrically conductive than the substrate layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.