Semiconductor light emitting device including hole injection layer
US9257599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2014 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | May 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
Abstract
According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.