CMP method for forming smooth diamond surfaces
US9259819B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 23, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Sep 23, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH≦3 or pH greater than 11. At least an outer surface of the plurality of particles is softer than the diamond surface or the particles are diamond particles averaging less than (<) 2 μm in size. The diamond surface is pressed with respect to a polishing pad providing a Shore D Hardness less than 99 having the slurry in between while rotating the polishing pad relative to the diamond surface to form a smooth diamond surface having a root mean square (rms) surface roughness less than 15 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.