Chemical mechanical polishing layer formulation with conditioning tolerance
US9259821B2 · kind B2 · utility
29Cited by
9References
11Claims
0Family size
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Key dates
| Filing date | Jun 25, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Jun 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A chemical mechanical polishing pad is provided containing: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition exhibits an acid number of ≧0.5 mg (KOH)/g; wherein the polishing surface is adapted for polishing a substrate; and, wherein the polishing surface exhibits a conditioning tolerance of ≧80%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.