Integration of pressure or inertial sensors into integrated circuit fabrication and packaging
US9260294B2 · kind B2 · utility
4Cited by
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18Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 27, 2013 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Jan 16, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0792
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The integration of pressure or inertial sensors into an integrated circuit fabrication and packaging flow is described. In one example, a diaphragm is formed by depositing a metal over a first dielectric layer. A second dielectric layer is formed over the diaphragm. A metal mesh layer is formed over the second dielectric. The first dielectric layer is etched under the diaphragm to form a cavity. The cavity is lined with a sealing layer. The cavity is covered to form a chamber adjoining the diaphragm, and the cover is sealed against the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.