Silicided MOS capacitor explosive device initiator
US9261341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Jul 20, 2034 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF42C19/12
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
An explosive device using a semiconductor explosion initiator device provides an MOS capacitor formed on a semiconductor substrate and including a silicide layer formed over a doped silicon layer formed over an oxide layer. The oxide layer is formed on an N-well formed in a semiconductor substrate. A voltage source applies a voltage which may be a pulsed voltage, across the MOS capacitor sufficient to cause the avalanche breakdown of the oxide layer and the diffusion of metal from the silicide layer into the doped silicon of the N-well formed in the substrate. The chemical reaction between the metal and the doped silicon causes the generation of a plasma which ignites a pyrotechnic material or ignites or detonates other explosive material in contact with the semiconductor explosion initiator device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.