Patent · US Active

Method for determining programming parameters for programming a resistive random access memory

US9263129B2 · kind B2 · utility

3Cited by

0References

9Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Thomas CABOUT · Grenoble, FR
Elisa VIANELLO · Grenoble, FR

Key dates

Filing date	May 15, 2015
Grant date	Feb 16, 2016
Priority date	—
Expiry date	May 15, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/0083
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method for determining programming parameters for programming a resistive random access memory switching from an OFF state to an ON state, the method including determining retention curves representing the increase in the ON state resistance as a function of time, for a given programming temperature and a given current limitation; determining a retention failure time for each of the retention curves; determining curves representing the decrease in the retention failure time as a function of the programming temperature, for a given current limitation; for at least one given programming temperature, determining, from the curves representing the decrease in the retention failure time, a current limiting value to be applied to the resistive random access memory in order to obtain a target retention failure time.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.