Manufacturing method of semiconductor device
US9263304B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Jul 19, 2011 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Jun 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Suppressed is damage of a semiconductor wafer due to charging of a cleaning liquid used in a single wafer type wafer cleaning step.A chemical solution discharged from a tip of a cleaning nozzle is brought into contact with protrusions of wafer chucks to thereby let static electricity of the chemical solution go to the wafer chucks, and subsequently, the cleaning nozzle is moved above the wafer to supply the chemical solution onto a top surface of the wafer, thereby suppressing abnormal discharge (damage) of the wafer due to charging of the chemical solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.