Kenji Kanamitsu
12Patents
4h-index
18Co-inventors
53Inventor score
Filing activity: Dec 28, 1999 → Jul 19, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6635945B1 | Semiconductor device having element isolation structure | Electricity | 8 | Expired |
| US7282411B2 | Method of manufacturing a nonvolatile semiconductor memory device | Electricity | 6 | Expired |
| US6544839B1 | Semiconductor integrated circuit device and a method of manufacturing the same | Electricity | 5 | Expired |
| US7303951B2 | Method of manufacturing a trench isolation region in a semiconductor device | Electricity | 4 | Expired |
| US7411242B2 | Miniaturized virtual grounding nonvolatile semiconductor memory device and manufacturing method thereof | Electricity | 4 | Active |
| US6858515B2 | Process for producing semiconductor device and semiconductor device produced thereby | Electricity | 2 | Expired |
| US7180788B2 | Nonvolatile semiconductor memory device | Electricity | 1 | Expired |
| US7126184B2 | Nonvolatile semiconductor memory device and a method of the same | Physics | 0 | Expired |
| US7358129B2 | Nonvolatile semiconductor memory device and a method of the same | Physics | 0 | Active |
| US9263304B2 | Manufacturing method of semiconductor device | Electricity | 0 | Active |
| US6967141B2 | Method of manufacturing a semiconductor integrated circuit device having a trench | Electricity | 0 | Expired |
| US7524729B2 | Method of manufacturing a semiconductor integrated circuit device having a trench | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.