Method of forming an integrated inductor by dry etching and metal filling
US9263351B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Sep 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses an inductive element formed by through silicon via interconnections. The inductive element formed by means of the special through silicon via interconnection by using through silicon via technology features advantages such as high inductance and density. Moreover, the through silicon via interconnection integrated process forming the inductive element is compatible with the ordinary through silicon interconnection integrated process without any other steps, thus making the process simple and steady. The inductive element using the present invention is applicable to the through silicon via package manufacturing of various chips, especially the package manufacturing of power control chips and radio-frequency chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.