Mixed metal-silicon-oxide barriers
US9263359B2 · kind B2 · utility
2Cited by
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20Claims
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Assignee
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Key dates
| Filing date | Feb 26, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Feb 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a thin barrier film of a mixed metal-silicon-oxide is disclosed. For example, a method of forming an aluminum-silicon-oxide mixture having a refractive index of 1.8 or less comprises exposing a substrate to sequences of a non-hydroxylated silicon-containing precursor, activated oxygen species, and metal-containing precursor until a mixed metal-silicon-oxide film having a thickness of 500 Ångstroms or less is formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.