Semiconductor device and method of manufacturing the same
US9263368B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Apr 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate on which a plurality of contact regions are defined, a plurality of transistors formed in the plurality of contact regions, a support body formed over the plurality of transistors and including a top surface, portions of which have different heights in the plurality of contact regions, a plurality of stacked structures including a plurality of conductive layers stacked over the support body, slits located between the plurality of stacked structures, first lines coupled to first junctions of the plurality of transistors through the slits, and second lines coupled to second junctions of the plurality of transistors through the slits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.