Mechanisms for forming metal-insulator-metal (MIM) capacitor structure
US9263437B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2013 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Feb 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of mechanisms for forming a metal-insulator-metal (MIM) capacitor structure are provided. The metal-insulator-metal capacitor structure includes a substrate. The MIM capacitor structure also includes a CBM layer formed on the substrate, and the CBM layer includes a bottom barrier layer, a main metal layer and a top barrier layer. The MIM capacitor structure further includes a first high-k dielectric layer formed on the CBM layer, an insulating layer formed on the first high-k dielectric layer and a second high-k dielectric layer formed on the insulating layer. The MIM capacitor structure also includes a CTM layer formed on the second high-k dielectric layer, and the CBM layer includes a bottom barrier layer, a main metal layer and a top barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.