Devices having inhomogeneous silicide schottky barrier contacts
US9263444B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Aug 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/8311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating Schottky barrier contacts for an integrated circuit (IC). A substrate including a silicon including surface is provided having a plurality of transistors formed thereon, where the plurality of transistors include at least one exposed p-type surface region and at least one exposed n-type surface region on the silicon including surface. A plurality of metals are deposited including Yb and Pt to form at least one metal layer on the substrate. The metal layer is heated to induce formation of an inhomogeneous silicide layer including both Ptsilicide and Ybsilicide on the exposed p-type and n-type surface regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.