Solar cell emitter region fabrication using ion implantation

US9263625B2 · kind B2 · utility

Assignee

• SUNPOWER CORPORATION · US

Inventors

• David D. Smith · Dublin, US
• Timothy Weidman · Sunnyvale, US
• Staffan Westerberg · Sunnyvale, US

Key dates

• Filing date: Jun 30, 2014
• Grant date: Feb 16, 2016
• Expiry date: Jul 27, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.