Group III nitride semiconductor light-emitting device
US9263639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Jul 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
Abstract
The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission output. The light-emitting device comprises an n-type contact layer on which an n-electrode is formed, a light-emitting layer, an n-type cladding layer formed between the light-emitting layer and the n-type contact layer. The n-type cladding layer has a structure of at least two layers including a first n-type cladding layer closer to the light-emitting layer and a second n-type cladding layer farther from the light-emitting layer than the first n-type cladding layer. The first n-type cladding layer has a Si concentration higher than that of the second n-type cladding layer, and the first n-type cladding layer has a thickness smaller than that of the second n-type cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.