Light emitting diodes
US9263641B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2012 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Feb 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
Abstract
An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.