Ion implantation apparatus and method of determining state of ion implantation apparatus
US9269540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2013 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Jan 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/304
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation apparatus according to an embodiment includes an ion implantation unit, a position detection unit, a charge supply unit, a current value detection unit, and a determination unit. The ion implantation unit scans the surface of a substrate with an ion beam containing positively charged ions and implants the ions into the substrate. The position detection unit detects the scan position of the ion beam on the substrate. The charge supply unit generates a plasma, emits electrons contained in the plasma, and supplies the electrons to the substrate. The current value detection unit detects a current value that changes in accordance with the amount of electrons emitted by the charge supply unit. The determination unit determines the charge build-up state of the substrate based on a change in the current value, the change being accompanied by a change in the scan position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.