Method of manufacturing semiconductor device using the same
US9269568B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jul 3, 2014 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Jul 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.