Mechanisms of forming damascene interconnect structures
US9269612B2 · kind B2 · utility
25Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2012 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Mar 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure includes a first trench and a second trench. The second trench is wider than the first trench. Both trenches are lined with a diffusion barrier layer, and a first conductive layer is deposited over the diffusion barrier layer. A metal cap layer is deposited over the first conductive layer. A second conductive layer is deposited over the metal cap layer in the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.