Method of forming semiconductor device using remote plasma treatment
US9269614B2 · kind B2 · utility
1Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2015 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Feb 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device comprises forming a first etch stop layer over a substrate. The method also comprises forming a low-k dielectric layer comprising carbon over the first etch stop layer. The method further comprises forming an opening in the low-k dielectric layer. The method additionally comprises filling the opening with a conductive layer. The method also comprises performing a remote plasma treatment on the low-k dielectric layer and the conductive layer. The method further comprises forming a second etch stop layer over the treated conductive layer and the treated low-k dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.