Process for producing a multifunctional dielectric layer on a substrate

US9269669B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johann Helneder · Landsham, DE
• Markus Schwerd · Holzkirchen, DE
• Thomas Goebel · Wolfsberg, AT
• Andrea Mitchell · Munich, DE
• Heinrich Koerner · Bruckmühl, DE
• Martina Hommel · Munich, DE

Key dates

• Filing date: Feb 23, 2012
• Grant date: Feb 23, 2016
• Expiry date: Feb 23, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A multifunctional dielectric layer can be formed on a substrate, especially on an exposed metallic strip conductor system on a substrate. An additional metal layer is formed across the surface of the exposed metal strip conductors. The metal layer is then at least partially converted to a nonconducting metal oxide, the dielectric layer.