ESD protection using diode-isolated gate-grounded nMOS with diode string
US9269703B2 · kind B2 · utility
1Cited by
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7Claims
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Key dates
| Filing date | Aug 7, 2014 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Aug 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
An ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device. A method of forming an ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.