Semiconductor device and method of manufacturing the same
US9269719B2 · kind B2 · utility
1Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2012 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Dec 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
Abstract
A semiconductor device includes a pipe gate, word lines stacked on the pipe gate, first channel layers configured to pass through the word lines, and a second channel layer formed in the pipe gate to connect the first channel layers and having a higher impurity concentration than the first channel layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.