Patent · US Active

Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device

US9269785B2 · kind B2 · utility

9Cited by

6References

18Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Johannes Mueller · Berlin, DE
Dina H. Triyoso · Mechanicville, US
Robert Binder · Dresden, DE
Joachim Metzger · Rockenberg, DE
Patrick Polakowski · Dresden, DE

Key dates

Filing date	Jan 27, 2014
Grant date	Feb 23, 2016
Priority date	—
Expiry date	Jan 27, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/693
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure provides a semiconductor device comprising a substrate, an undoped HfO2 layer formed over the substrate and a TiN layer formed on the HfO2 layer. Herein, the undoped HfO2 layer is at least partially ferroelectric. In illustrative methods for forming a semiconductor device, an undoped amorphous HfO2 layer is formed over a semiconductor substrate and a TiN layer is formed on the undoped amorphous HfO2 layer. A thermal annealing process is performed for at least partially inducing a ferroelectric phase in the undoped amorphous HfO2 layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.