Normally-off-type heterojunction field-effect transistor
US9269801B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 12, 2012 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Dec 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A normally-off-type HFET includes: an undoped AlwGa1-wN layer of t1 thickness, an undoped AlxGa1-xN layer of t2 thickness and an undoped GaN channel layer of tch thickness that are sequentially stacked; a source electrode and a drain electrode separated from each other and electrically connected to the channel layer; an undoped AlyGa1-yN layer of t3 thickness formed between the source electrode and the drain electrode on the channel layer; an AlzGa1-zN layer of t4 thickness formed in a shape of a mesa on a partial area of the AlyGa1-yN layer between the source electrode and the drain electrode; and a Schottky barrier type gate electrode formed on the AlzGa1-zN layer, in which conditions of y>x>w>z, t1>t4>t3 and 2wtch/(x−w)>t2>1 nm are satisfied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.