Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer
US9269890B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Aug 29, 2013 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Aug 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/325
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.