Isolation of magnetic layers during etch in a magnetoresistive device
US9269894B2 · kind B2 · utility
35Cited by
2References
24Claims
0Family size
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Key dates
| Filing date | Jun 4, 2014 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Jun 4, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49021
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Isolation of magnetic layers in the magnetoresistive stack is achieved by passivation of sidewalls of the magnetic layers or deposition of a thin film of non-magnetic dielectric material on the sidewalls prior to subsequent etching steps. Etching the magnetic layers using a non-reactive gas further prevents degradation of the sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.