Method for evaluating degree of crystalline orientation of polycrystalline silicon, method for selecting polycrystalline silicon rod, polycrystalline silicon rod, polycrystalline silicon ingot, and method for manufacturing monocrystalline silicon
US9274069B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2013 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Jun 18, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2223/606
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
When the degree of crystalline orientation of polycrystalline silicon is evaluated by an X-ray diffraction method, each obtained disc-like sample 20 is disposed in a position where Bragg reflection from a Miller index face <hkl> is detected and in-plane rotated at a rotational angle φ with the center of the disc-like sample 20 as the center of rotation, so that an X-ray-radiated region defined by a slit φ-scans over the principal surface of the disc-like sample 20, to determine a chart representing the dependence of the intensity of Bragg reflection from the Miller index face <hkl> on the rotational angle (φ) of the disc-like sample 20, a baseline is determined from the chart, and the diffraction intensity value of the baseline is used as an estimative index of the degree of crystalline orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.