Read operation of MRAM using a dummy word line
US9275714B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2014 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Sep 26, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1693
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods relate to a read operation on a magnetoresistive random access memory (MRAM). Prior to determining whether there is a hit in the MRAM for a first address corresponding to the read operation, a dummy word line is activated, based on at least a subset of bits of the first address. A settling process for a reference voltage for reading MRAM bit cells at the first address is initiated, based on dummy cells connected to the dummy word line and a settled reference voltage is obtained. If there is a hit, a first word line is activated based on a row address determined from the first address, and the MRAM bit cells at the first address are read using the settled reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.