Write buffer for resistive random access memory
US9275732B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2014 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | May 22, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0038
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit includes a current generator and a voltage generator. The current generator is configured to generate a predetermined current flowing toward a selected cell in a memory array via a node during a write operation. The voltage generator is configured to generate a predetermined voltage. The voltage level at the node is clamped at a predetermined value associated with the predetermined voltage as the selected cell is switched between a low resistance state and a high resistance state during the write operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.