Flash memory having dual supply operation
US9275738B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2015 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Apr 27, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory device may operate from two supply voltages, one being provided externally, and the other being generated within the flash memory device from the external supply voltage. The flash memory device may be provided with a selectable-level buffer for interfacing with either low supply voltage or high supply voltage integrated circuits. To provide even greater flexibility, the flash memory device may be provided with the capability of receiving a second supply voltage from an external source, which may take precedence over the internally-generated second supply voltage or may be combined with the internally-generated second supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.