Method for S/TEM sample analysis
US9275831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2014 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Nov 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An improved method and apparatus for S/TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (<100 nm thick) TEM lamellae. Preferred embodiments of the present invention also provide an in-line process for S/TEM based metrology on objects such as integrated circuits or other structures fabricated on semiconductor wafer by providing methods to partially or fully automate TEM sample creation, to make the process of creating and analyzing TEM samples less labor intensive, and to increase throughput and reproducibility of TEM analysis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.