Semiconductor structure and method for manufacturing the same

US9276085B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huaxiang Yin · Beijing, CN
• Xiaolong Ma · Beijing, CN
• Changliang Qi · Beijing, CN
• Qiuxia Xu · Beijing, CN
• Dapeng Chen · Beijing, CN

Key dates

• Filing date: Apr 26, 2012
• Grant date: Mar 1, 2016
• Expiry date: Apr 26, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

The present invention provides a semiconductor structure comprising a substrate; a gate stack on the substrate; a spacer on the sidewalls of the gate stack; a source/drain junction extension formed in the substrate on both sides of the gate stack by epitaxial growth; and a source/drain region in the substrate on both sides of the source/drain junction extension. Accordingly, the present invention also provides methods for manufacturing the semiconductor structure. The present invention can provide a source/drain junction extension with a high doping concentration and a low junction depth, thereby effectively improving the performance of the semiconductor structure.