Patent · US Active

High-voltage transistor with high current load capacity and method for its production

US9276109B2 · kind B2 · utility

1Cited by

3References

4Claims

0Family size

Assignee

AMS AG · AT

Inventor

Georg Röhrer · Graz, AT

Key dates

Filing date	Oct 13, 2009
Grant date	Mar 1, 2016
Priority date	—
Expiry date	Jul 14, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/307
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An isolation area (10) is provided over a drift region (12) with a spacing (d) to a contact area (4) provided for a drain connection (D). The isolation area is used as an implantation mask, in order to produce a dopant profile of the drift region in which the dopant concentration increases toward the drain. The implantation of the dopant can be performed instead before the production of the isolation area, and the later production of the isolation area (10) changes the dopant profile also in a way that the dopant concentration increases toward the drain.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.