Semiconductor device and method for producing same
US9276126B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2013 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Jan 24, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This semiconductor device (100A) includes: a substrate (1); a gate electrode (3) and a first transparent electrode (2) which are formed on the substrate (1); a first insulating layer (4) formed over the gate electrode (3) and the first transparent electrode (2); an oxide semiconductor layer (5) formed on the first insulating layer (4); source and drain electrodes (6s, 6d) electrically connected to the oxide semiconductor layer (5); and a second transparent electrode (7) electrically connected to the drain electrode (6d). At least a portion of the first transparent electrode (2) overlaps with the second transparent electrode (7) with the first insulating layer (4) interposed between them, and the oxide semiconductor layer (5) and the second transparent electrode (7) are formed out of the same oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.