Semiconductor device and method for producing same
US9276127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2013 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Jun 11, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This TFT substrate (100A) includes: a gate connecting layer (3a) formed on a substrate (1) out of a same conductive film as a gate electrode (3) or a transparent connecting layer (2a) formed on the substrate (1) out of a same conductive film as a first transparent electrode (2); an oxide layer (5z) which is formed on an insulating layer (4) and which includes at least one conductor region (5a); and a source connecting layer (6a) formed on the oxide layer (5z) out of a same conductor film as a source electrode (6s). The source connecting layer (6a) is electrically connected to either the gate connecting layer (3a) or the transparent connecting layer (2a) via the at least one conductor region (5a).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.