Power semiconductor device formed from a vertical thyristor epitaxial layer structure
US9276160B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | May 27, 2014 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | May 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/148
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device suitable for power applications includes a thyristor epitaxial layer structure defining an anode region offset vertically from a cathode region with a plurality of intermediate regions therebetween. An anode electrode is electrically coupled to the anode region. A cathode electrode is electrically coupled to the cathode region. A switchable current path that extends vertically between the anode region and the cathode region has a conducting state and a non-conducting state. An epitaxial resistive region is electrically coupled to and extends laterally from one of the plurality of intermediate regions. An FET is provided having a channel that is electrically coupled to the epitaxial resistive region. The FET can be configured to inject (or remove) electrical carriers into (or from) the one intermediate region via the epitaxial resistive region in order to switch the switchable current path between its non-conducting state and its conducting state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.