Wet-process ceria compositions for polishing substrates, and methods related thereto
US9279067B2 · kind B2 · utility
2Cited by
16References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 10, 2013 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Feb 15, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B1/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises wet-process ceria abrasive particles, (e.g., about 120 nm or less), at least one alcohol amine, at least one surfactant having at least one hydrophilic moiety and at least one hydrophobic moiety, the surfactant having a molecular weight of about 1000, and water, wherein the polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.