Cross quadrupole double lithography method using two complementary apertures
US9280041B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Mar 8, 2013 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Mar 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/302
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of photolithography including coupling a first aperture to a lithography system, then performing a first illumination process to form a first pattern on a layer of a substrate using the first aperture, thereafter coupling a second aperture to the lithography system, and performing a second illumination process to form a second pattern on the layer of the substrate using the second aperture. The first aperture includes a first pair and a second pair of radiation-transmitting regions. The second aperture includes a second plate having a third pair and a fourth pair of radiation-transmitting regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.