Wet-process ceria compositions for polishing substrates, and methods related thereto
US9281210B2 · kind B2 · utility
1Cited by
20References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 10, 2013 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Oct 10, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises low average particle size (e.g., 30 nm or less) wet-process ceria abrasive particles, at least one alcohol amine, and water, wherein said polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.