Patent · US Active

Methods of forming wiring structures

US9281277B2 · kind B2 · utility

469Cited by
7References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 30, 2014
Grant dateMar 8, 2016
Priority date
Expiry dateOct 30, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A wiring structure includes a first insulation layer, a plurality of wiring patterns, a protection layer pattern and a second insulation layer. The first insulation layer may be formed on a substrate. A plurality of wiring patterns may be formed on the first insulation layer, and each of the wiring patterns may include a metal layer pattern and a barrier layer pattern covering a sidewall and a bottom surface of the metal layer pattern. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.