System and method for fine pitch PoP structure
US9281288B2 · kind B2 · utility
1Cited by
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20Claims
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Key dates
| Filing date | Feb 7, 2014 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Feb 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fine pitch package-on-package (PoP), and a method of forming, are provided. The PoP may be formed by placing connections, e.g., solder balls, on a first substrate having a semiconductor die attached thereto. A first reflow process is performed to elongate the solder balls. Thereafter, a second substrate having another semiconductor die attached thereto is connected to the solder balls. A second reflow process is performed to form an hourglass connection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.