Semiconductor devices and methods of fabricating the same
US9281361B2 · kind B2 · utility
1Cited by
3References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 17, 2013 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Nov 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/41
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plurality of gate structures on a substrate, the plurality of gate structures including a gate metal pattern and delimiting air gaps formed therebetween, an insulating layer on the plurality of gate structures, and a porous insulating layer between the plurality of gate structures and the insulating layer, the porous insulating layer configured to cross the plurality of gate structures to delimit the air gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.