JongWan Choi
8Patents
3h-index
24Co-inventors
49Inventor score
Filing activity: Aug 30, 2012 → Mar 30, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10529554B2 | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches | Electricity | 359 | Active |
| US8883611B2 | Methods of fabricating semiconductor devices having air gaps in dielectric layers | Electricity | 14 | Active |
| US9196630B2 | Semiconductor devices having carbon-contained porous insulation over gate stack structures | Electricity | 4 | Active |
| US9780113B2 | Method for fabricating semiconductor device including a first ILD with sloped surface on a stacked structure and a second ILD on the first ILD | Electricity | 3 | Active |
| US9281361B2 | Semiconductor devices and methods of fabricating the same | Electricity | 1 | Active |
| US11823866B2 | Thin film forming method | Electricity | 0 | Active |
| US11676812B2 | Method for forming silicon nitride film selectively on top/bottom portions | Electricity | 0 | Active |
| US10720322B2 | Method for forming silicon nitride film selectively on top surface | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.