Metal gate structure and fabrication method thereof
US9281374B2 · kind B2 · utility
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24References
15Claims
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Key dates
| Filing date | Sep 19, 2014 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Sep 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate. The metal layer is located on the gate dielectric layer. The titanium aluminum nitride metal layer is located on the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.