Charge compensation structure and manufacturing therefor

US9281392B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Joachim Weyers · Grevesmühlen, DE
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Jun 27, 2014
• Grant date: Mar 8, 2016
• Expiry date: Aug 9, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/517

Abstract

A charge-compensation semiconductor device includes a semiconductor body including a first surface, a second surface arranged opposite to the first surface, an edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, a drain region of a of a first conductivity type extending to the second surface, an active area, and a peripheral area arranged between the active area and the edge, a source metallization arranged on the first surface, and a drain metallization arranged on the drain region and in Ohmic contact with the drain region. In a vertical cross-section substantially orthogonal to the first surface the charge-compensation semiconductor device further includes: an equipotential region in Ohmic contact with the drain metallization and arranged in the peripheral area and next to the first surface, a low-doped semiconductor region arranged in the peripheral area and having a first concentration of dopants, and a plurality of first pillar regions alternating with second pillar regions in the active area and the peripheral area. The first pillar regions having a second concentration of dopants of the first conductivity type higher…