Three-dimensional graphene switching device
US9281404B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Jan 3, 2013 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Jan 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
Abstract
A switching device includes a semiconductor layer, a graphene layer, a gate insulation layer, and a gate formed in a three-dimensional stacking structure between a first electrode and a second electrode formed on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.